AlGaN/GaN HFET: Operating Principle And Noise Performance
نویسندگان
چکیده
The operating principle and noise performance in AlGaN/GaN HFETs has been studied. In particular, it has been demonstrated that substrate material selection plays a great role in device performance for application point of view. Polarization induced surface states plays key role in formation of 2 DEG. Performance parameters study of device is related to noise study in devices because low frequency noise affects the device performance. Different types of noise and their possible reasons has been studied.
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تاریخ انتشار 2013